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IR062HD4C10U-P2 の電気的特性と機能
IR062HD4C10U-P2のメーカーはInternational Rectifierです、この部品の機能は「HIGH VOLTAGE HALF BRIDGE」です。 |
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製品の詳細 ( Datasheet PDF )
部品番号 IR062HD4C10U-P2 |
部品説明 HIGH VOLTAGE HALF BRIDGE |
メーカ International Rectifier |
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Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
• Output Power IGBT’s in half-bridge configuration
• 575V rated breakdown voltage
• High side gate drive designed for bootstrap
operation
• Matched propagation delay for both channels
• Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Metal heatsink back for improved PD
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use.The device can operate up to 575 volts.
Product Summary
VIN (max)
PD (TA = 25°C)
VCE(ON) typ
Package
575V
3.0W
3.0V
7 Pin
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IR062HD4C10U-P2
IR082HD4C10U-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
VIN
VB
VO
VIH/VIL
VCC
dV/dt
PD
RthJA
RthJc
TJ
TS
TL
Definition
High voltage supply
High side floating supply absolute voltage
Half-bridge output voltage
Logic input voltage (HIN & LIN)
Low side and logic fixed supply voltage
Peak diode recovery dv/dt
Package power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
Thermal resistance, junction to case (metal)
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
- 0.3
VO -0.3
-0.3
- 0.3
-0.3
—
—
—
—
-55
-55
—
Max.
575
VO+ 25
VIN+ 0.3
Vcc + 0.3
25
3.50
3.00
50
20
150
150
300
Units
VV
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions.
Symbol
VB
VIN
VO
VCC
VIH/VIL
TA
IC
Definition
High side floating supply absolute voltage
High voltage supply
Half-bridge output voltage
Low side and logic fixed supply voltage
Logic input voltage (HIN & LIN)
Ambient temperature
Continuous collector current (TC = 25 °C)
(TC = 85 °C)
Min.
VO + 10
—
(note 1)
10
0
-40
—
——
Max.
VO + 20
575
VIN
20
VCC
125
2.0
1.1
Units
V
A
Note 1:
Logic operational for VO of -5 to 575V. Logic state held for VO of -5 to -VBO
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IR062HD4C10U-P2
IR082HD4C10U-P2
Case Outline - 7 pin
4X
5.08 (.100)
2X
16.89 (.665)
16.63 (.655)
3.18 (.125)
2.92 (.115)
NOTES:
1. Dimensioning and tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in
millimeters (inches)
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合計 : 7 ページ |
PDF ダウンロード [ IR062HD4C10U-P2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |

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部品番号 | 部品説明 | メーカ |
IR062HD4C10U-P2 | HIGH VOLTAGE HALF BRIDGE | ![]() International Rectifier |