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STE38NB50 の電気的特性と機能

STE38NB50のメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL PowerMESH MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STE38NB50
部品説明
N - CHANNEL PowerMESH MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STE38NB50 Datasheet, STE38NB50 PDF,ピン配置, 機能
® STE38NB50
N - CHANNEL 500V - 0.11 - 38A - ISOTOP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STE38NB50
500 V < 0.13 38 A
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1998
Value
Unit
500 V
500 V
± 30
V
38 A
24 A
152 A
400 W
3.2 W/oC
4.5
-65 to 150
150
(1) ISD 38 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/8

1 Page





STE38NB50 pdf, ピン配列
STE38NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V
ID = 19 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 38 A VGS = 10 V
Min.
Typ.
46
32
159
35
67
Max.
64
45
223
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V
ID = 38 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
56
53
120
Max.
78
74
168
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM()
VSD ()
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 38 A VGS = 0
ISD = 38 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
38
152
Unit
A
A
1.6
950
12
25
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STE38NB50 電子部品, 半導体
STE38NB50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page

合計 : 8 ページ
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部品番号部品説明メーカ
STE38NB50

N - CHANNEL PowerMESH MOSFET

ST Microelectronics
ST Microelectronics
STE38NB50F

N - CHANNEL PowerMESH MOSFET

ST Microelectronics
ST Microelectronics

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