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STS2DNFS30L の電気的特性と機能

STS2DNFS30LのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STS2DNFS30L
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STS2DNFS30L Datasheet, STS2DNFS30L PDF,ピン配置, 機能
STS2DNFS30L
N-CHANNEL 30V - 0.09- 3A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30 V
< 0.11
SCHOTTKY
IF(AV)
VRRM
1 A 30 V
ID
3A
VF(MAX)
0.46 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRSM
dv/dt
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
August 2001
TL = 135°C
δ = 0.5
tp = 10 ms
Sinusoidal
tp = 100 µs
Value
30
30
± 15
3
1.9
12
2
Value
30
7
1
45
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
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1 Page





STS2DNFS30L pdf, ピン配列
E1.LECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 1.5 A
RG = 4.7 VGS = 4.5 V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
VDD = 24 V, ID = 3 A,
VGS = 4.5 V
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V, ID = 1.5 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs,
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current
TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 1 A
TJ = 125 °C , IF = 1 A
STS2DNFS30L
Min.
Typ.
19
20
4.5
1.7
0.9
Max.
6
Unit
ns
ns
nC
nC
nC
Min.
Typ.
12
8
Max.
Unit
ns
ns
Min.
Typ.
19
8.1
0.85
Max.
3
12
1.2
Unit
A
A
V
ns
nC
A
Min.
Typ.
1.5
0.37
Max.
10
10
0.55
0.46
Unit
µA
mA
V
V
3/6


3Pages


STS2DNFS30L 電子部品, 半導体
STS2DNFS30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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部品番号部品説明メーカ
STS2DNFS30L

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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