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STS2DPFS20V の電気的特性と機能

STS2DPFS20VのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STS2DPFS20V
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
ロゴ

ST Microelectronics ロゴ 




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STS2DPFS20V Datasheet, STS2DPFS20V PDF,ピン配置, 機能
STS2DPFS20V
P-CHANNEL 20V - 0.14 - 2.5A SO-8
2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
20 V
< 0.20(@4.5V)
< 0.25(@2.7V)
SCHOTTKY IF(AV)
VRRM
3 A 30 V
ID
2.5 A
VF(MAX)
0.51 V
DESCRIPTION
This product associates the latest low voltage
StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Dain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kW)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM() Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Value
20
20
± 12
2.5
1.58
10
2
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
VRRM Repetitive Peak Reverse Voltage
30
IF(RMS) RMS Forward Curren
20
IF(AV) Average Forward Current
TL=125 oC
δ =0.5
3
IFSM
Surge Non Repetitive Forward Current
tp= 10 ms
Sinusoidal
75
IRSM Non Repetitive Peak Reverse Current tp=100 µs
1
dv/dt Critical Rate Of Rise Of Reverse Voltage
10000
() Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
November 2002
.
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/8

1 Page





STS2DPFS20V pdf, ピン配列
STS2DPFS20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 1 A
RG = 4.7
VGS = 4.5 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 10V ID= 2A VGS=4.5V
Min.
Typ.
38
30
3.5
0.34
0.8
Max.
4.7
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 10 V
ID = 1 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
45
11
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 2 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 2 A
di/dt = 100A/µs
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
15
7.5
1
Max.
2
10
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STS2DPFS20V 電子部品, 半導体
STS2DPFS20V
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

6 Page

合計 : 8 ページ
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[ STS2DPFS20V データシート.PDF ]

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部品番号部品説明メーカ
STS2DPFS20V

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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