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STS25NH3LL の電気的特性と機能

STS25NH3LLのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STS25NH3LL
部品説明
N-CHANNEL POWER MOSFET
メーカ
ST Microelectronics
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ST Microelectronics ロゴ 




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STS25NH3LL Datasheet, STS25NH3LL PDF,ピン配置, 機能
STS25NH3LL
N-CHANNEL 30V - 0.0032 - 25A SO-8
STripFET™ III MOSFET FOR DC-DC CONVERSION
TYPE
VDSS
RDS(on)
ID
STS25NH3LL
30 V <0.0035 25 A
s TYPICAL RDS(on) = 0.0032 @ 10V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
The STS25NH3LL utilizes the latest advanced design
rules of ST's propetary STripFET™ technology. This
novel 0.6µ process coupled to unique metalization
techniques re alizes the most advanced low voltage
MOSFET in SO-8 ever produced. It is therefore suit able
for the most demanding DC-DC converter applications
where high efficiency is to be achived at high output
current.
APPLICATIONS
s DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE
s SYNCHRONOUS RECTIFIER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
EAS (1) Single Pulse Avalanche Energy
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
September 2003
.
Value
30
30
± 18
25
18
100
200
3.2
(1) Starting Tj = 25 oC ID = 12.5A
VDD = 30V
Unit
V
V
V
A
A
A
mJ
W
1/8

1 Page





STS25NH3LL pdf, ピン配列
STS25NH3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 12.5 A
RG = 4.7 VGS = 10 V
(Resistive Load, Figure 1)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=15V ID=25A VGS=4.5 V
(see test circuit, Figure 2)
Min.
Typ.
18
50
30
12.5
10
Max.
40
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 12.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
75
8
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 25 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 25 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 3)
Min.
Typ.
32
34
2.1
Max.
25
100
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8


3Pages


STS25NH3LL 電子部品, 半導体
STS25NH3LL
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8

6 Page

合計 : 8 ページ
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[ STS25NH3LL データシート.PDF ]

データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。

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部品番号部品説明メーカ
STS25NH3LL

N-CHANNEL POWER MOSFET

ST Microelectronics
ST Microelectronics

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