Discrete POWER & Signal
MBR2535CT - MBR2560CT
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
• Metal silicon junction, majority carrier
• High current capacity, low forward
• Guard ring for over voltage protection.
30 Ampere Schottky Barrier Rectifiers
0 .1 13 ( 2. 87 )
0 .1 03 ( 2. 62 )
0 .1 6( 4 .0 6)
0 .1 4( 3 .5 6)
0 .0 37 ( 0. 94 )
0 .0 27 ( 0. 68 )
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
0 .4 12 ( 10 .5 )
0 .1 54 ( 3. 91 )
0 .1 48 ( 3. 74 )
0 .5 94 ( 15 .1 )
0 .5 87 ( 14 .9 )
0 .1 05 ( 2. 67 )
0 .0 95 ( 2. 41 )
Dimensions are in: inches (mm)
Average Rectified Current
.375 " lead length @ TA = 130°C
Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
-65 to +175
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
Peak Repetitive Reverse Surge
2.0 us Pulse Width, f = 1.0 KHz
©1999 Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT, Rev. A
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