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MBR20H90CT の電気的特性と機能
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MBR20H90CTのメーカーはVishay Siliconixです、この部品の機能は「Dual Common Cathode High Voltage Schottky Rectifier」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 MBR20H90CT |
| 部品説明 Dual Common Cathode High Voltage Schottky Rectifier |
| メーカ Vishay Siliconix |
ロゴ |
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MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR20H90CT
MBR20H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF20H90CT
MBRF20H100CT
PIN 1
PIN 2
PIN 3
2
1
MBRB20H90CT
MBRB20H100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
IR
VF
TJ max.
Package
2 x 10 A
90 V to 100 V
250 A
4.5 μA
0.64
175 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ. TSTG
VAC
MBR20H90CT
MBR20H100CT
90 100
90 100
90 100
20
10
250
1.0
10 000
-65 to +175
1500
UNIT
V
A
V/μs
°C
V
Revision: 29-Jul-15
1 Document Number: 88673
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page
MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
16
MBR, MBRB
12
8
4 MBRF
0
0 50 100 150 180
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
10 000
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1 TJ = 25 °C
0.01
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
300
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1 TJ = 25 °C
0.01
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
10 000
1000
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1 1
t - Pulse Duration (s)
10
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 29-Jul-15
3 Document Number: 88673
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages
合計 : 5 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| MBR20H90CT | Dual Common Cathode High Voltage Schottky Rectifier | Vishay Siliconix |
| MBR20H90CTG | Dual Common Cathode High Voltage Schottky Rectifier |  Vishay |