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MBR2035CT の電気的特性と機能

MBR2035CTのメーカーはDiodes Incorporatedです、この部品の機能は「20A SCHOTTKY BARRIER RECTIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号
MBR2035CT
部品説明
20A SCHOTTKY BARRIER RECTIFIER
メーカ
Diodes Incorporated
ロゴ

Diodes Incorporated ロゴ 




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MBR2035CT Datasheet, MBR2035CT PDF,ピン配置, 機能
MBR2030CT - MBR2060CT
20A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Marking: Type Number
· Weight: 2.24 grams (approx)
· Mounting Position: Any
B
C
K
D
L
M
A
12 3
E
JN
G
HH
Pin 1 +
Pin 2 -
Pin 3 +
P
+
Case
TO-220AB
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
H 2.29 2.79
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop (Note 3)
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
@ IF = 20A, TC = 25°C
@ IF = 20A, TC = 125°C
@ IF = 10A, TC = 125°C
@ TC = 25°C
@ TC = 125°C
(Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJc
dV/dt
Tj, TSTG
MBR
2030CT
30
21
MBR MBR MBR
2035CT 2040CT 2045CT
35 40 45
24.5 28 31.5
20
150
0.84
0.72
0.57
0.1
15
650
2.0
1000
-65 to +150
MBR MBR
2050CT 2060CT
50 60
35 42
0.95
0.85
0.70
10,000
Unit
V
V
A
A
V
mA
pF
°C/W
V/ms
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
DS23016 Rev. G-2
1 of 2
MBR2030CT-MBR2060CT

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部品番号部品説明メーカ
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MBR2035CT

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Motorola Semiconductors
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MBR2035CT

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General Semiconductor
General Semiconductor
MBR2035CT

20A SCHOTTKY BARRIER RECTIFIER

Diodes Incorporated
Diodes Incorporated

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