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MBR160 の電気的特性と機能
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MBR160のメーカーはMotorola Semiconductorsです、この部品の機能は「Axial Lead Rectifiers」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 MBR160 |
| 部品説明 Axial Lead Rectifiers |
| メーカ Motorola Semiconductors |
ロゴ |
このページの下部にプレビューとMBR160ダウンロード（pdfファイル）リンクがあります。 Total 4 pages |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBR150/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B150, B160
MBR150
MBR160
MBR160 is a
Motorola Preferred Device
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
50, 60 VOLTS
CASE 59–04
PLASTIC
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
vAverage Rectified Forward Current (2)
(VR(equiv) 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting,
see Note 3, TA = 55°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
THERMAL CHARACTERISTICS (Notes 3 and 4)
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF = 0.1 A)
(iF = 1 A)
(iF = 3 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
(TL = 25°C)
(TL = 100°C)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
TJ, Tstg
TJ(pk)
Symbol
RθJA
Symbol
vF
iR
MBR150
50
MBR160
60
35 42
1
25 (for one cycle)
*65 to +150
150
Max
80
Max
0.550
0.750
1.000
0.5
5
Unit
Volts
Volts
Amp
Amps
°C
°C
Unit
°C/W
Unit
Volt
mA
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1
1 Page
90
80
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
70
60
MAXIMUM
50
TYPICAL
40
30
20
10
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0
L, LEAD LENGTH (INCHES)
Figure 5. Steady–State Thermal Resistance
NOTE 3 — MOUNTING DATA:
Data shown for thermal resistance junction–to–ambient
(RθJA) for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the tie
point temperature cannot be measured.
Typical Values for RθJA in Still Air
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4
1 52 65 72 85
2 67 80 87 100
3—
50
RθJA
°C/W
°C/W
°C/W
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
RθS(A) RθL(A) RθJ(A)
TA(A)
TL(A)
TC(A) TJ
RθJ(K) RθL(K) RθS(K)
PD
TC(K)
TA(K)
TL(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RθS = Thermal Resistance, Heat Sink to Ambient
RθL = Thermal Resistance, Lead to Heat Sink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
MBR150 MBR160
200
TJ = 25°C
f = 1 MHz
100
80
70
60
50
40
30
20
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance
Mounting Method 1
Mounting Method 3
P.C. Board with
P.C. Board with
1–1/2″ x 1–1/2″
1–1/2″ x 1–1/2″
copper surface.
LL
ÉÉÉÉÉÉÉ
copper surface.
É L = 3/8″
ÉÉÉ BOARD GROUND
É PLANE
Mounting Method 2
ÉÉÉÉLÉÉÉÉÉÉLÉÉÉÉÉÉ
VECTOR PIN MOUNTING
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum.
RθJ = 36°C/W typically and 46°C/W maximum.
NOTE 5 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of ma-
jority carrier conduction, it is not subject to junction diode for-
ward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
diode in parallel with a variable capacitance. (See Figure 6.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2 MHz, e.g., the ratio of dc power to RMS power in
the load is 0.28 at this frequency, whereas perfect rectifica-
tion would yield 0.406 for sine wave inputs. However, in con-
trast to ordinary junction diodes, the loss in waveform effi-
ciency is not indicative of power loss: it is simply a result of
reverse current flow through the diode capacitance, which
lowers the dc output voltage.
Rectifier Device Data
3
3Pages
合計 : 4 ページ |
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| 部品番号 | 部品説明 | メーカ |
| MBR160 | Axial Lead Rectifiers | Motorola Semiconductors |
| MBR160 | 1 AMP SCHOTTKY RECTIFIER |  Digitron Semiconductors |
| MBR160 | Schottky Rectifier ( Diode ) |  Vishay |
| MBR160 | SCHOTTKY BARRIER RECTIFIER DIODES |  EIC |