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RDN100N20 の電気的特性と機能
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RDN100N20のメーカーはROHM Semiconductorです、この部品の機能は「Switching (200V/ 10A)」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 RDN100N20 |
| 部品説明 Switching (200V/ 10A) |
| メーカ ROHM Semiconductor |
ロゴ |
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Transistors
Switching (200V, 10A)
RDN100N20
RDN100N20
!Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
!Application
Switching
!Structure
Silicon N-channel
MOS FET
!External dimensions (Unit : mm)
TO-220FN
10.0
+0.3
−0.1
3.2±0.2
4.5
+0.3
−0.1
2.8
+0.2
−0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
−0.05
(1) (2) (3)
2.6±0.5
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed
ID
IDP ∗1
Reverse Drain
Current
Avalanche Current
Avalanche Energy
Continuous
Pulsed
IDR
IDRP
IAS
EAS
∗1
∗2
∗2
Total Power Dissipation (TC=25°C)
PD
Channel Temperature
Tch
Storage Temperature
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Limits
200
±30
10
40
10
40
10
120
35
150
−55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
!Equivalent circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/3
1 Page
Transistors
RDN100N20
0.8
VGS=10V
0.7 Pulsed
0.6
0.5
0.4
ID=10A
0.3
4A
0.2
0.1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static Drain-Source
On-State Resistance vs.
Channel Temperature
20
VDS=10V
Pulsed
10
5
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
2
1
0.5
0.2
0.05 0.1 0.2 0.5 1 2
5 10 20
DRAIN CURRENT : ID (A)
Fig.8 Forward Transfer Admittance
vs. Drain Current
100
VGS=0V
Pulsed
10
1 Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage
10000
1000
100
10
f=1MHz
VGS=0V
Ta=25°C
Pulsed
Ciss(pF)
Coss(pF)
Ciss(pF)
1
0.1 1 10 100 1000
DRAIN SOURCE VOLTAGE : VDS (V)
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
200
180
160 VDS
20
Ta=25°C
ID=8.0A
Pulsed
140
120
VDD=40V
VDD=100V
VGS
100 VDD=160V
10
80
60
40
VDD=40V
VDD=100V
20 VDD=160V
00
0 5 10 15 20
TOTAL GATE CHARGE : Qg (nC)
Fig.11 Dynamic Input Characteristics
1000
100
Ta=25°C
di / dt=100A / µs
VGS=0V
Pulsed
10
0.1
1
10 100
REVERSE DRAIN CURRENT : IDR (A)
Fig.12 Reverse Recovery Time
vs. Reverse Drain Current
1000
tr
100 td (off)
Ta=25°C
VDD=100V
VGS=10V
RQ=10Ω
Pulsed
tr
td (on)
10
0.1
1
10
DRAIN CURRENT : ID (A)
100
Fig.13 Switching Characteristcs
10
1 D=1
0.5
0.2
0.1
0.1 0.05
0.02
0.01 0.01
Tc=25°C
θth(ch-c)(t)=r(t) • =θth(ch-c)
θth(ch-c)=3.57°C / W
Single pulse
0.001
10µ 100µ 1m
PW
T
D=
PW
T
10m 100m 1 10
PULSE WIDTH : PW (S)
Fig.14 Normalized Transient
Thermal Resistance vs.
Pulse Width
3/3
3Pages
合計 : 4 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| RDN100N20 | Switching (200V/ 10A) | ROHM Semiconductor |