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2N5795 の電気的特性と機能
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2N5795のメーカーはMotorola Semiconductorsです、この部品の機能は「DUAL TRANSISTOR」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 2N5795 |
| 部品説明 DUAL TRANSISTOR |
| メーカ Motorola Semiconductors |
ロゴ |
このページの下部にプレビューと2N5795ダウンロード（pdfファイル）リンクがあります。 Total 1 pages |
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2N5795
2N5796
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
DUAL TRANSISTOR
PNP SILICON
Refer to MD2904,A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Power Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"C
PD
Pd
Tj, Tstg
Value
60
60
5.0
600
One
Die
500
2.9
Both Die
Equal
Power
600
3.4
1.2 2.0
6.9 11.43
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) 0c = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (Ip = 10 /*Adc, Ie
Emitter-Base Breakdown Voltage Qg = 10 /iAdc, \q = 0)
Collector Cutoff Current (Vcb = 50 Vdc, lg -. 0)
Emitter Cutoff Current (Vbe = 3.0 Vdc, lp = 0)
Collector 1 to Collector 2 Leakage Current (V1C-2C = ±50 vdc
ON CHARACTERISTICS
DC Current Gain
dC = 100 fiAdc, Vce = 1° vdc >
c(l = 1.0 mAdc, Vce = 10 vdc >
c(l = 10 mAdc. Vce = 10Vdc)(1)
dC = 150 mAdc, Vce = 10Vdc)(D
c(l = 150 mAdc, Vce = 10Vdc)(1)
dC = 500 mAdc, Vce = 10 VdcHD
2N5795
2N5796
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2N5796
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2N5796
Collector-Emitter Saturation Voltaged) 0c = 150 mAdc, Ib = 15 mAdc)
dC = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltaged) (lc = 150 mAdc, Ib = 15 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2) C(l = 50 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb
=
1°
vdc
-
*E
=
°- f
=
10° kHz)
Emitter-Base Capacitance (Veb = 2.0 Vdc, lc = 0. f = 10° kHz >
SWITCHING CHARACTERISTICS (See Figure 1)
Delay Time
Rise Time
(Vce
=
30
Vdc
<
v BE(off)
=
°- 5 Vdc'
lC = 150 mAdc, BI 1 = 15 mAdc)
Storage Time
Fall Time
(Vce
=
30
vdc
-
'C
=
150 mAdc,
'B1 = 'B2 = 15 mAdc)
(1) Pulse Test: Pulse Width =s 300 fis, Duty Cycle =£ 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
'EBO
'C1-C2'
hFE
VCE(sat)
VBE(sat)
Ccb
Ceb
Min
40
75
,40
100
40
100
20
50
40
100
40
50
Max
20
100
:1.0
120
300
0.4
1.6
1.3
2.6
8.0
,30
35
100
40
5-34
1 Page
合計 : 1 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| 2N5793 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor Corp |
| 2N5793 | NPN SILICON DUAL TRANSISTOR |  Microsemi |
| 2N5793 | DUAL TRANSISTOR | Motorola Semiconductors |
| 2N5794 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor |