|
2N5794 の電気的特性と機能
|
2N5794のメーカーはMotorola Semiconductorsです、この部品の機能は「DUAL TRANSISTOR」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 2N5794 |
| 部品説明 DUAL TRANSISTOR |
| メーカ Motorola Semiconductors |
ロゴ |
このページの下部にプレビューと2N5794ダウンロード（pdfファイル）リンクがあります。 Total 1 pages |
No Preview Available ! |
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
vEBO
ic
PD
Pd
TJ. Tstg
Value
40
75
6.0
600
One
Die
Both Die
Equal
Power
500 600
2.9 3.4
1.2 2.0
6.9 11.43
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
mCollector-Emitter Breakdown VoltageQ) (Ic = 10 Adc, \q = 0)
Collector-Base Breakdown Voltage c(l = 10 fiAdc, lg = 0)
Emitter-Base Breakdown Voltage (lg = 10 /iAdc, Ic = 0)
Collector Cutoff Current (Vcb = 50 Vdc, lg = 0)
Emitter Cutoff Current (Veb = 4.0 Vdc, Ic = 0)
Collector 1 to Collector 2 Leakage Curre nt (ViC-2C
ON CHARACTERISTICS
± 50 Vdc)
DC Current Gain
dC = 100 jiAdc, Vce = 10 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)(1)
dC = 150 mAdc, Vce = 10 Vdc)(1)
dC = 150 mAdc, Vce = 10 Vdc)(1)
flC = 300 mAdc, Vce = 10 Vdc)(1)
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
Collector-Emitter Saturation VoltageO) 0c = 150 mAdc, Ib = 15 mAdc)
dC = 300 mAdc, Ib = 30 mAdc)
Base-Emitter Saturation Voltaged) dc = 150 mAdc, Bl = 15 mAdc)
dC = 300 mAdc, Bl = 30 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2) c(l = 20 mAdc, Vce = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance (Vcb = 10 Vdc, )£ = 0, f = 100 kHz)
Emitter-Base Capacitance (Veb = 0-5 Vdc, lc = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(Vce = 30 Vdc, VB E(off) = 0.5 Vdc,
IC = 150 mAdc, BI 1 = 15 mAdc)
Storage Time
Fall Time
(Vce = 30 Vdc, lc = 150 mAdc,
IBI = 'B2 = 15 mAdc)
(1) Pulse Test: Pulse Width *s 300 fis, Duty Cycle *£ 2.0%.
(2) fj is defined as the frequency at which |hfe | extrapolates to unity.
2N5793
2N5794
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
DUAL TRANSISTOR
NPN SILICON
Refer to MD2218.A for graphs.
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
>CBO
'EBO
'C1-C2
hFE
v CE(sat)
v BE(sat)
Min
40
20
35
25
50
35
75
20
50
40
100
25
40
250
ccb
Ceb
Max
10
10
:1.0
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
120
300
0.3
0.9
1.2
1.8
8.0
15
30
250
Vdc
Vdc
MHz
pF
PF
5-33
1 Page
合計 : 1 ページ |
| PDF ダウンロード [ 2N5794 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| 2N5793 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor Corp |
| 2N5793 | NPN SILICON DUAL TRANSISTOR |  Microsemi |
| 2N5793 | DUAL TRANSISTOR | Motorola Semiconductors |
| 2N5794 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor |