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2N5794 の電気的特性と機能
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2N5794のメーカーはMicrosemiです、この部品の機能は「NPN SILICON DUAL TRANSISTOR」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 2N5794 |
| 部品説明 NPN SILICON DUAL TRANSISTOR |
| メーカ Microsemi |
ロゴ |
このページの下部にプレビューと2N5794ダウンロード（pdfファイル）リンクがあります。 Total 5 pages |
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /495
DEVICES
2N5793
2N5794
2N5794U 2N5794UC
LEVELS
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Symbol
VCEO
VCBO
VEBO
IC
PT
Value
40
75
6.0
600
One Total
Section 1 Device 2
0.5 0.6
Operating & Storage Junction Temperature Range Top, Tstg
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
NOTES:
1. Derate linearly 2.86 mW/°C for TA > +25°C
2. Derate linearly 3.43 mW/°C for TA > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 10mAdc
Symbol Min.
Max.
V(BR)CEO
40
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 50Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
ICBO
10
10
IEBO
10
10
Unit
Vdc
Adc
Adc
Adc
Adc
TO-78
6 PIN SURFACE MOUNT
T4-LDS-0213 Rev. 1 (111181)
Page 1 of 5
1 Page
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
CD
CH
H
L
L
LC
LC
LC
T
T
α
Inches
Min Max
.305 .335
.150 .185
.335 .370
.016 .021
.500
.200 BSC
.100 BSC
.100 BSC
.029 .045
.028 .034
45° TP
Millimeters
Min Max
7.75 8.51
3.81 4.70
8.51 9.40
0.41 0.53
12.7
5.08 BSC
2.54 BSC
2.54 BSC
0.74 1.14
0.71 0.86
45° TP
Note
4
3
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Measured from maximum diameter of the product.
4. Leads having maximum diameter .019 inch (.483 mm) measured in gaging plan .054 inch (1.37 mm)
+ .001 inch (.025 mm) - .000 inch (.000 mm) below the seating plane of the product shall be within .007 inch (.178 mm)
of their true position relative to a maximum width tab.
5. The product may be measured by direct methods or by gauge.
6. Tab centerline.
7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 1. Physical dimensions (2N5793 and 2N5797) (similar to TO-99)
T4-LDS-0213 Rev. 1 (111181)
Page 3 of 5
3Pages
合計 : 5 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| 2N5793 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor Corp |
| 2N5793 | NPN SILICON DUAL TRANSISTOR | Microsemi |
| 2N5793 | DUAL TRANSISTOR |  Motorola Semiconductors |
| 2N5794 | NPN SILICON DUAL TRANSISTOR |  Central Semiconductor |