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FQP65N06 の電気的特性と機能
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FQP65N06のメーカーはThinki Semiconductorです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 FQP65N06 |
| 部品説明 N-Channel Power MOSFET / Transistor |
| メーカ Thinki Semiconductor |
ロゴ |
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FQP65N06
®
FQP65N06
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
BVDSS = 60V
RDS(ON) = 0.016 ohm
ID = 65A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220M
FQP65N06
60
65
46.1
260
± 25
650
65
15.0
7.0
150
1.00
-55 to +175
300
23
1
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ
Max
Units
--
1.00
°C/W
0.5 -- °C/W
-- 62.5 °C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/
1 Page
FQP65N06
®
Typical Characteristics
Top : 15.V0GVS
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
30
25
VGS = 10V
20
VGS = 20V
15
10
5
※ Note : TJ = 25℃
0
0 50 100 150 200 250 300
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. V = 0 V
GS
2. f =1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
100
2
-55℃
※ Notes :
1. V = 25V
2. 25DS0μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 65A
0
0 10 20 30 40 50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/
3Pages
FQP65N06
®
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 6/6
http://www.thinkisemi.com/
6 Page
合計 : 6 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| FQP65N06 | 60V N-Channel MOSFET |  Fairchild Semiconductor |
| FQP65N06 | N-Channel Power MOSFET / Transistor | Thinki Semiconductor |