DataSheet.jp


データシート IRFZ46 PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ46
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 
プレビュー
Total 8 pages
		
11

No Preview Available !

IRFZ46 Datasheet, IRFZ46 PDF,ピン配置, 機能
Power MOSFET
IRFZ46, SiHFZ46
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
50
VGS = 10 V
66
21
25
Single
0.024
TO-220
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFZ46PbF
SiHFZ46-E3
IRFZ46
SiHFZ46
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 34 µH, RG = 25 Ω, IAS = 54 A (see fig. 12).
c. ISD 54 A, dI/dt 250 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 54 A).
LIMIT
50
± 20
50
38
220
1.0
100
150
4.5
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90372
S09-0070-Rev. A, 02-Feb-09
For technical questions, contact: hvmos.techsupport@vishay.com
www.vishay.com
1

1 Page



IRFZ46 pdf, ピン配列
Power MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFZ46, SiHFZ46
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90372
S09-0070-Rev. A, 02-Feb-09
For technical questions, contact: hvmos.techsupport@vishay.com
www.vishay.com
3


3Pages


IRFZ46 電子部品, 半導体
IRFZ46, SiHFZ46
Vishay Siliconix
Power MOSFET
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
For technical questions, contact: hvmos.techsupport@vishay.com
Document Number: 90372
S09-0070-Rev. A, 02-Feb-09

6 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRFZ46.PDF ]

共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
IRFZ40

There is a function of N-Channel MOSFET Transistor.

Inchange Semiconductor
Inchange Semiconductor
IRFZ40

There is a function of (IRFZ42 / IRFZ40) N-Channel Enhancement Mode Power MOS Transistors.

ST Microelectronics
ST Microelectronics
IRFZ40

There is a function of (IRFZ40 - IRFZ45) N-Channel Power MOSFETS.

Samsung Electronics
Samsung Electronics
IRFZ40

There is a function of (IRFZ40 / IRFZ42) Power Field Effect Transistors.

Motorola Semiconductor
Motorola Semiconductor


多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2017   |  メール    |   最新    |   Sitemap