DataSheet.jp


データシート IRFZ44L PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44L
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 
プレビュー
Total 9 pages
		
11

No Preview Available !

IRFZ44L Datasheet, IRFZ44L PDF,ピン配置, 機能
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 10 V
67
Qgs (nC)
18
Qgd (nC)
25
Configuration
Single
0.028
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ44S, SiHFZ44S)
• Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D2PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L, SiHFZ44L) is available
for low profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHFZ44S-GE3
Lead (Pb)-free
Note
IRFZ44SPbF
SiHFZ44S-E3
a. See device orientation.
D2PAK (TO-263)
SiHFZ44STRR-GE3a
IRFZ44STRRPbFa
SiHFZ44STR-E3a
D2PAK (TO-263)
SiHFZ44STRL-GE3a
IRFZ44STRLPbFa
SiHFZ44STL-E3a
I2PAK (TO-262)
-
IRFZ44LPbF
SiHFZ44L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagef
Gate-Source Voltagef
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, f
TA = 25 °C
TC = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperatured)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.
f. Uses IRFZ44, SiHFZ44 data and test conditions.
LIMIT
60
± 20
50
36
200
1.0
100
3.7
150
4.5
- 55 to + 175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91293
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page



IRFZ44L pdf, ピン配列
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91293
S11-1063-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFZ44L 電子部品, 半導体
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91293
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page





ページ 合計 : 9 ページ
PDF
ダウンロード
[ IRFZ44L.PDF ]

共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
IRFZ44

There is a function of Power MOSFET.

IR
IR
IRFZ44

There is a function of (IRFZ40 - IRFZ45) N-Channel Power MOSFETS.

Samsung Electronics
Samsung Electronics
IRFZ44

There is a function of Power MOSFET.

Fairchild
Fairchild
IRFZ44

There is a function of Power MOSFET.

Vishay
Vishay

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2017   |  メール    |   最新    |   Sitemap