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データシート MDD5N40 PDF ダウンロード ( 特性, スペック, ピン接続図 )

部品番号 MDD5N40
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
プレビュー
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MDD5N40 Datasheet, MDD5N40 PDF,ピン配置, 機能
MDI5N40/MDD5N40
N-Channel MOSFET 400V, 3.4 A, 1.6
General Description
The MDI5N40 / MDD5N40 use advanced
Magnachips MOSFET Technology, which provides
low on-state resistance, high switching performance
and excellent quality.
MDI5N40 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 400V
ID = 3.4A
RDS(ON) ≤ 1.6
Applications
Power Supply
PFC
Ballast
@VGS = 10V
@VGS = 10V
D
I-PAK
G D S (TO-251)
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(4)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAR
EAS
TJ, Tstg
Rating
400
±30
3.4
2.15
13.6
45
0.36
4.5
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec. 2011. Version 1.5
1
Symbol
RθJA
RθJC
Rating
110
2.75
Unit
oC/W
MagnaChip Semiconductor Ltd.

1 Page



MDD5N40 pdf, ピン配列
10
9
Vgs=5.5V
=6.0V
=6.5V
8 =7.0V
=8.0V
7 =10.0V
=15.0V
6
Notes
1. 250PulseTest
2. TC=25
5
4
3
2
1
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 1.7 A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
10
* Notes ;
1. VDS=30V
150
25
1
46
VGS [V]
Fig.5 Transfer Characteristics
8
Dec. 2011. Version 1.5
3
3.4
3.2
3.0
2.8
2.6
2.4
2.2
VGS=10.0V
2.0
1.8 VGS=20V
1.6
1.4
1.2
1.0
05
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
1.2
Notes :
1. V = 0 V
GS
2. ID = 250
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
Notes :
10 1. VGS = 0 V
2. 250us pulse
1 150
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDD5N40 電子部品, 半導体
Physical Dimension
D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified
Dec. 2011. Version 1.5
6 MagnaChip Semiconductor Ltd.

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