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電子部品 FDMS86368 Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 FDMS86368
部品説明 N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FDMS86368 Datasheet, FDMS86368 PDF,ピン配置, 機能
FDMS86368_F085
N-Channel PowerTrench® MOSFET
80 V, 80 A, 4.5 mΩ
December
2014
Features
„ Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
For current package drawing, please refer to the Fairchild web
site  at  https://www.fairchildsemi.com/packagedrawings/PQ/
PQFN08M.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
80
See Figure 4
82
214
1.43
-55 to + 175
0.7
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 40uH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDMS86368
Device
FDMS86368_F085
Package
Power56
Reel Size
13”
Tape Width
12mm
Quantity
3000units
©2014 Fairchild Semiconductor Corporation
FDMS86368_F085 Rev. C1
1
www.fairchildsemi.com

--------------------------------------------
FDMS86368 pdf, 電子部品, 半導体, ピン配列
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.1 0.01
SINGLE PULSE
200
175
CURRENT LIMITED
BY PACKAGE
VGS = 10V
150 CURRENT LIMITED
125 BY SILICON
100
75
50
25
0
25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5
10-4 10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
101
1000
VGS = 10V
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
FDMS86368_F085 Rev. C1
3
100 101
www.fairchildsemi.com





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