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データシート N04L163WC2A PDF ダウンロード ( 特性, スペック, ピン接続図 )

部品番号 N04L163WC2A
部品説明 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
メーカ NanoAmp Solutions
ロゴ NanoAmp Solutions ロゴ 
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N04L163WC2A Datasheet, N04L163WC2A PDF,ピン配置, 機能
NanoAmp Solutions, Inc.
N04L163WC2A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N04L163WC2AB
N04L163WC2AT
N04L163WC2AB2
N04L163WC2AT2
Package Type
48 - BGA
44 - TSOP II
48 - BGA Green
44 - TSOP II Green
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
-40oC to +85oC 2.3V - 3.6V 70ns @ 2.7V
4 µA
2 mA @ 1MHz
(DOC# 14-02-017 REV G ECN# 01-1268)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N04L163WC2A pdf, ピン配列
NanoAmp Solutions, Inc.
Functional Block Diagram
N04L163WC2Awww.DataSheet4U.com
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
16K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
L HX XHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby
Write3
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC# 14-02-017 REV G ECN# 01-1268)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3


3Pages


N04L163WC2A 電子部品, 半導体
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N04L163WC2Aw w w . D a t a S h e
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tLBZ, tUBZ
tHZ
tOHZ
tLBHZ, tUBHZ
tOH
-70
2.3 - 2.65 V
2.7 - 3.6 V
Min. Max. Min. Max.
85 70
85 70
85 70
30 25
85 70
10 10
55
10 10
0 20 0 20
0 20 0 20
0 20 0 20
10 10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC 85
70 ns
tCW 50
50 ns
tAW 50
50 ns
tLBW, tUBW
50
50 ns
tWP 40
40 ns
tAS 0
0 ns
tWR 0
0 ns
tWHZ
20 20 ns
tDW 40
40 ns
tDH 0
0 ns
tOW 5
5 ns
(DOC# 14-02-017 REV G ECN# 01-1268)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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