DataSheet.jp


データシート IRFZ34NPBF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ34NPBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 8 pages
		
11

No Preview Available !

IRFZ34NPBF Datasheet, IRFZ34NPBF PDF,ピン配置, 機能
PD - 94807
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Lead-Free
IRFZ34NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 0.040
S ID = 29A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
29
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
°C/W
1
11/3/03

1 Page



IRFZ34NPBF pdf, ピン配列
IRFZ34NPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TC = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 4.5V
1
0.1
0.1
20µs PULSE WIDTH
TC = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 175°C
10
VDS = 25V
1
20µs PULSE WIDTH
A
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.4 ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0 VGS = 10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ34NPBF 電子部品, 半導体
IRFZ34NPbF
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
140 I D
TOP
6.5A
120 11A
BOTTOM 16A
100
80
60
40
20
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRFZ34NPBF.PDF ]

共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
IRFZ34NPBF

There is a function of HEXFET Power MOSFET.

International Rectifier
International Rectifier


多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2017   |  メール    |   最新    |   Sitemap