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データシート IRFZ34VLPBF PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ34VLPBF
部品説明 (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ34VLPBF Datasheet, IRFZ34VLPBF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted)**
www.irf.com
PD - 95560
IRFZ34VSPbF
IRFZ34VLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 28m
ID = 30A
S
D2Pak
IRFZ34VS
TO-262
IRFZ34VL
Max.
30
21
120
70
0.46
± 20
30
7.0
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
2.15
40
Units
°C/W
1
07/15/04
www.DataSheet4U.com

1 Page



IRFZ34VLPBF pdf, ピン配列
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFZ34VS/LPbF
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ= 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 4.5V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175° C
10
V DS= 50V
20µs PULSE WIDTH
1
4 5 6 7 8 9 10 11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.5 ID = 30A
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ34VLPBF 電子部品, 半導体
IRFZ34VS/LPbF
VDS
L
15V
DRIVER
160
120
TOP
BOTTOM
ID
12A
21A
30A
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
80
40
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

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