DataSheet.jp

データシート IRFZ34N PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ34N
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 8 pages
		
11

No Preview Available !

IRFZ34N Datasheet, IRFZ34N PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
www.DataSheet4U.com
PD -9.1276C
IRFZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.040
ID = 29A
S
TO-220AB
Max.
29
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
°C/W
8/25/97

1 Page



IRFZ34N pdf, ピン配列
IRFZ34N
1000
100
TOP
BOTT OM
VG S
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5V
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
4.5V
1
0.1
0.1
20 µ s PU LSE W ID TH
TC = 25 °C
A
1 10 100
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
1
0.1
0.1
20µs PULSE W IDTH
TC = 175°C
A
1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 7 5 °C
10
VDS = 25V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
VG S = 1 0V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFZ34N 電子部品, 半導体
IRFZ34N
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
140
ID
TOP 6.5A
120 11A
BOTTOM 16A
100
80
60
40
20
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page





ページ 合計 : 8 ページ
PDF
ダウンロード
[ IRFZ34N.PDF ]

共有リンク

Link :


おすすめデータシート

部品番号部品説明メーカ
IRFZ34

There is a function of Power MOSFET.

Fairchild Semiconductor
Fairchild Semiconductor
IRFZ34

There is a function of (IRFZ30 / IRFZ34) N-Channel Power MOSFET.

Samsung Electronics
Samsung Electronics
IRFZ34

There is a function of Power MOSFET.

International Rectifier
International Rectifier
IRFZ34

There is a function of (IRFZ34 / IRFZ35) N-Channel Transistors.

International Rectifier
International Rectifier

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2017   |  メール    |   最新    |   Sitemap