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データシート 20N60C2 PDF ダウンロード


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部品番号 20N60C2
部品説明 SPP20N60C2
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 
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20N60C2 Datasheet, 20N60C2 PDF,ピン配置, 機能
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
www.DataSheet4UP.ceormiodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Product Summary
VDS @ Tjmax 650
RDS(on)
0.19
ID 20
V
A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
Ordering Code
P-TO220-3-1 Q67040-S4320
P-TO263-3-2 Q67040-S4322
P-TO220-3-31 Q67040-S4333
Marking
20N60C2
20N60C2
20N60C2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS = 20 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
ID
20 201)
13 131)
ID puls
EAS
40
690
40
690
Unit
A
A
mJ
EAR 1 1
IAR 20 20 A
dv/dt
6
6 V/ns
VGS
VGS
Ptot
Tj , Tstg
±20 ±20 V
±30 ±30
208 34.5 W
-55...+150
°C
2002-08-12

--------------------------------------------
20N60C2 pdf, 電子部品, 半導体, ピン配列
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Electrical Characteristics
Parameter
Symbol
Conditions
Characteristics
Transconductance
gfs
www.DataSheet4U.com
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS 2*ID *RDS(on)max,
ID =13A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Gate Charge Characteristics
VDD=380V, VGS=0/13V,
ID =20A,
RG=3.6, Tj=125°C
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=350V, ID=20A
VDD=350V, ID=20A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=20A
Values
Unit
min. typ. max.
- 12 - S
- 3000 - pF
- 1170 -
- 28 -
- 83 -
- 160 -
- 21 - ns
- 51 -
- 56 84
- 69
- 21 - nC
- 46 -
- 79 103
- 8 -V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2002-08-12





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