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データシート IRFZ46Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ46Z
部品説明 AUTOMOTIVE MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ46Z Datasheet, IRFZ46Z PDF,ピン配置, 機能
PD - 94769
AUTOMOTIVE MOSFET
IRFZ46Z
IRFZ46ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
IRFZ46ZL
HEXFET® Power MOSFET
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
D
VDSS = 55V
O Repetitive Avalanche Allowed up to Tjmax
Description
G
RDS(on) = 13.6m
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
S ID = 51A
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
TO-220AB
IRFZ46Z
D2Pak
IRFZ46ZS
TO-262
IRFZ46ZL
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
51
36
200
A
PD @TC = 25°C Maximum Power Dissipation
82 W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
0.54
± 20
63
97
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.84
–––
62
40
°C/W
www.irf.com
1
09/12/03

1 Page



IRFZ46Z pdf, ピン配列
IRFZ46Z/S/L
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100 TJ = 175°C
10 TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
1.0
4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
50
TJ = 25°C
40
30
TJ = 175°C
20
10
0
0
VDS = 10V
10 20 30 40 50
ID,Drain-to-Source Current (A)
60
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRFZ46Z 電子部品, 半導体
IRFZ46Z/S/L
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
6
300
ID
250 TOP 3.5A
5.0A
BOTTOM 31A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
3.0
ID = 250µA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

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