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データシート IRFZ48NL PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48NL
部品説明 (IRFZ48NL / IRFZ48NS) Advanced Process Technology
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ48NL Datasheet, IRFZ48NL PDF,ピン配置, 機能
l Advanced Process Technology
l Surface Mount (IRFZ48NS)
l Low-profile through-hole (IRFZ48NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRFZ48NL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RqJC
RqJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1408B
IRFZ48NS
IRFZ48NL
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.014
ID = 64A
S
D 2 Pak
T O -26 2
Max.
64
45
210
3.8
130
0.83
± 20
32
13
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
1.15
40
Units
°C/W
1
03/12/01

1 Page



IRFZ48NL pdf, ピン配列
1000
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRFZ48NS/IRFZ48NL
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25 ° C
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
1
4 6 8 10 12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 64A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ48NL 電子部品, 半導体
IRFZ48NS/IRFZ48NL
15V
VDS
L
D RIVER
RG
20V
tp
D.U .T
IA S
0 .0 1
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
360
300
240
180
120
TOP
ID
13A
23A
BOTTOM 32A
V(BR)DSS
tp
60
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page





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