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データシート IRFZ44N PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44N
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ44N Datasheet, IRFZ44N PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94053
IRFZ44N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 17.5m
ID = 49A
S
TO-220AB
Max.
49
35
160
94
0.63
± 20
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
1.5
–––
62
Units
°C/W
1
01/03/01

1 Page



IRFZ44N pdf, ピン配列
IRFZ44N
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
20µs PULSE WIDTH
TJ = 175 °C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25 °C
TJ = 175 ° C
10
V DS= 25V
20µs PULSE WIDTH
1
4 5 6 7 8 9 10 11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 49A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ44N 電子部品, 半導体
IRFZ44N
VDS
L
15V
D R IV E R
300
240
TOP
BOTTOM
ID
10A
18A
25A
RG
20V
tp
D .U.T
IA S
0 .0 1
+
-
VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
180
120
60
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

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