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データシート IRFZ44NL PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44NL
部品説明 (IRFZ44NL / IRFZ44NS) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRFZ44NL Datasheet, IRFZ44NL PDF,ピン配置, 機能
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
www.irf.com
PD - 94153
IRFZ44NS
IRFZ44NL
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.0175
ID = 49A
S
D 2 Pak
T O -26 2
Max.
49
35
160
3.8
94
0.63
± 20
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
1.5
40
Units
°C/W
1
03/13/01

1 Page



IRFZ44NL pdf, ピン配列
IRFZ44NS/IRFZ44NL
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10 4.5V
20µs PULSE W IDTH
1
TTJC==2255°C°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
20µs PULSE W IDTH
1
TTCJ == 11775°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 2 5 °C
100
TJ = 1 7 5 °C
10
VDS = 25V
20µs PULSE W IDTH
1A
4 5 6 7 8 9 10
VGS , Gate-to-S ource Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5
ID = 41A
2.0
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFZ44NL 電子部品, 半導体
IRFZ44NS/IRFZ44NL
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
500
ID
TOP 10A
18A
400 BOTTOM 25A
300
200
100
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

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