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データシート IRFZ44VS PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44VS
部品説明 (IRFZ44VL / IRFZ44VS) Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
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IRFZ44VS Datasheet, IRFZ44VS PDF,ピン配置, 機能
PD - 94050A
IRFZ44VS
IRFZ44VL
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
D
VDSS = 60V
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
RDS(on) = 16.5m
ID = 55A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
D2Pak
IRFZ44VS
TO-262
IRFZ44VL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55
39
220
115
0.77
± 20
115
55
11
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.3
40
Units
°C/W
www.irf.com
1
01/04/02

1 Page



IRFZ44VS pdf, ピン配列
1000
TOP
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFZ44VS/IRFZ44VL
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10 4.5V
20µs PULSE WIDTH
TJ = 175°C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25° C
TJ = 175° C
10
VDS = 25V
20µs PULSE WIDTH
1
4 5 6 7 8 9 10 11 12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 55A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
vs. Temperature
3


3Pages


IRFZ44VS 電子部品, 半導体
IRFZ44VS/IRFZ44VL
15V
VDS
L
D RIVER
RG
20V
tp
D .U .T
IA S
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
250 ID
TOP
21A
36A
200 BOTTOM 51A
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (° C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

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