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データシート IRFZ44VZ PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44VZ
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ44VZ Datasheet, IRFZ44VZ PDF,ピン配置, 機能
PD - 94755
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
G
TO-220AB
IRFZ44VZ
IRFZ44VZ
IRFZ44VZS
IRFZ44VZL
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 12m
ID = 57A
S
D2Pak
IRFZ44VZS
TO-262
IRFZ44VZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
57
40
230
92
0.61
± 20
73
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.64
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
8/25/03

1 Page



IRFZ44VZ pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFZ44VZS_L
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1
4.0
TJ = 25°C
VDS = 25V
60µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
www.irf.com
60
50 TJ = 175°C
40
TJ = 25°C
30
20
10
0
0
VDS = 15V
380µs PULSE WIDTH
10 20 30 40 50
ID, Drain-to-Source Current (A)
60
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3


3Pages


IRFZ44VZ 電子部品, 半導体
IRFZ44VZS_L
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
300
ID
250
TOP 3.8A
5.0A
BOTTOM 34A
200
150
100
50
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
ID = 250µA
3.0
2.0
L
VCC
DUT
0 1.0
1K -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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