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データシート IRFZ44Z PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44Z
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
Total 12 pages
		
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IRFZ44Z Datasheet, IRFZ44Z PDF,ピン配置, 機能
PD - 94797
AUTOMOTIVE MOSFET
IRFZ44Z
IRFZ44ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
IRFZ44ZL
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 13.9m
S ID = 51A
TO-220AB
IRFZ44Z
D2Pak
IRFZ44ZS
TO-262
IRFZ44ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/8/03

1 Page



IRFZ44Z pdf, ピン配列
IRFZ44Z/S/L
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
1
0.1
4.5V 60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10 4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
TJ = 25°C
10
1.0
2
VDS = 15V
60µs PULSE WIDTH
4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
60
50
40
30
20
10
0
0
TJ = 25°C
TJ = 175°C
VDS = 10V
10 20 30 40
ID,Drain-to-Source Current (A)
50
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRFZ44Z 電子部品, 半導体
IRFZ44Z/S/L
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
400
ID
350 TOP 3.8A
5.5A
300 BOTTOM 31A
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
6
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

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