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電子部品 BCV61 Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 BCV61
部品説明 NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 
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BCV61 Datasheet, BCV61 PDF,ピン配置, 機能
NPN Silicon Double Transistors
Preliminary Data
q To be used as a current mirror
q Good thermal coupling and VBE matching
q High current gain
q Low emitter-saturation voltage
BCV 61
Type
BCV 61 A
BCV 61 B
BCV 61 C
Marking
1Js
1Ks
1Ls
Ordering Code
(tape and reel)
Q62702-C2155
Q62702-C2156
Q62702-C2157
Pin Configuration
Package1)
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
Collector current
Collector peak current
Base peak current (transistor T1)
Total power dissipation, TS 99 ˚C2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Values
30
Unit
V
30
6
100 mA
200
200
300 mW
150 ˚C
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
240
170
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
K/W
Semiconductor Group
1
5.91

--------------------------------------------
BCV61 pdf, 電子部品, 半導体, ピン配列
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T2
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
Matching of transistor T1 and transistor T2
at IE2 = 0.5 mA and VCE1 = 5 V
TA = 25 ˚C
TA = 150 ˚C
Thermal coupling of transistor T1 and
transistor T21) T1: VCE = 5 V
Maximum current for thermal stability of IC1
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, IC = iC = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = iC = 0, f = 1 MHz
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k
f = 1 kHz, B = 200 Hz
Input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Symbol
Values
Unit
min. typ. max.
VBES
0.4 –
––
IC1 / IC2
IC1 / IC2
IE2
0.7
0.7
5
V
1.8
1.3
1.3
– mA
fT – 250 – MHz
Ccb – 3 – pF
Cibo – 8 –
F – 2 – dB
h11e – 4.5 – k
h12e – 2 – 10– 4
h21e 100 – 900 –
h22e – 30 – µS
1) Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm.
Semiconductor Group
3





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