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部品番号 FCU3400N80Z
部品説明 MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FCU3400N80Z Datasheet, FCU3400N80Z PDF,ピン配置, 機能
March 2015
FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3.4 Ω
Features
• RDS(on) = 2.75 Ω (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
• Low Eoss (Typ. 0.9 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
S
FCD3400N80Z
FCU3400N80Z
800
±20
±30
2.0
1.2
4.0
12.8
0.4
0.32
100
20
32
0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD3400N80Z
FCU3400N80Z
3.9
62.5
Unit
oC/W
www.fairchildsemi.com

--------------------------------------------
FCU3400N80Z pdf, 電子部品, 半導体, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
5
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.3
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
10
VDS, Drain-Source Voltage[V]
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6
*Note: TC = 25oC
5
4
VGS = 10V
3
VGS = 20V
2
1
01234
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100 Ciss
Coss
10
1 *Note:
Crss
1. VGS = 0V
2. f = 1MHz
0.1
0.1 1 10 100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
150oC
25oC
1
-55oC
0.1
3
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
150oC
1
25oC
0.1
0.01
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 160V
8 VDS = 400V
VDS = 640V
6
4
2
*Note: ID = 2A
0
02468
Qg, Total Gate Charge [nC]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
3
www.fairchildsemi.com





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