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部品番号 FCD2250N80Z
部品説明 MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FCD2250N80Z Datasheet, FCD2250N80Z PDF,ピン配置, 機能
December 2014
FCD2250N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.6 A, 2.25
Features
• RDS(on) = 1.8 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low Eoss (Typ. 1.1 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switch-
ing power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
1
FCD2250N80Z
800
±20
±30
2.6
1.7
6.5
21.6
0.52
0.39
100
20
39
0.31
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD2250N80Z
3.2
100
Unit
oC/W
www.fairchildsemi.com

--------------------------------------------
FCD2250N80Z pdf, 電子部品, 半導体, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.6 *Note: TC = 25oC
3.0
2.4 VGS = 10V
1.8
VGS = 20V
1.2
0.0
1.2 2.4 3.6 4.8
ID, Drain Current [A]
6.0
Figure 5. Capacitance Characteristics
10000
1000
100
Ciss
10 *Note:
1. VGS = 0V
Coss
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1 10
Crss
100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250s Pulse Test
150oC
1
-55oC
25oC
0.1
2
3456
VGS, Gate-Source Voltage[V]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
1
150oC
0.1
25oC
0.010.0
0.3 0.6 0.9 1.2
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
*Note: ID = 2.6A
VDS = 160V
8
VDS = 400V
6
VDS = 640V
4
2
0
0 3 6 9 12
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
3
www.fairchildsemi.com





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