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部品番号 FCD850N80Z
部品説明 MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FCD850N80Z Datasheet, FCD850N80Z PDF,ピン配置, 機能
October 2014
FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 850 m
Features
• Typ. RDS(on) = 710 mTyp.)
• Ultra Low Gate Charge (Typ. Qg = 22 nC)
• Low Eoss (Typ. 2.3 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. In
addition, internal gate-source ESD diode allows to withstand
over 2kV HBM surge stress.Consequently, SuperFET II
MOSFET is very suitable for the switching power applications
such as Audio, Laptop adapter, Lighting, ATX power and
industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
D
G
S
D-PAK
G DS
Absolute Maximum Ratings TC=25oCunlessotherwisenoted.
I-PAK
G
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
1
S
FCD850N80Z
FCU850N80Z
800
±20
±30
6
3.8
18
114
1.2
0.284
100
20
75
0.6
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD850N80Z
FCU850N80Z
1.65
100
Unit
oC/W
www.fairchildsemi.com

--------------------------------------------
FCD850N80Z pdf, 電子部品, 半導体, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 20.0V
10.0V
8.0V
10 7.0V
6.5V
6.0V
5.5V
Figure 2. Transfer Characteristics
20
*Notes:
1. VDS = 20V
2. 250s Pulse Test
10
150oC
25oC
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.50 *Note: TC = 25oC
1.25
1.00
VGS = 10V
0.75
VGS = 20V
0.50
0
3 6 9 12 15 18
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
1000
Ciss
100
Coss
10 *Note:
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1 1
10 100
VDS, Drain-Source Voltage [V]
1000
-55oC
1
4567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
*Notes:
1. VGS = 0V
2. 250s Pulse Test
10
150oC
25oC
1
0.1 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 6A
8 VDS = 160V
VDS = 400V
6 VDS = 640V
4
2
0
0 6 12 18 24
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
FCD850N80Z / FCU850N80Z Rev. C0
3
www.fairchildsemi.com





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