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部品番号 FDD5N60NZ
部品説明 MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 
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FDD5N60NZ Datasheet, FDD5N60NZ PDF,ピン配置, 機能
FDD5N60NZ
N-Channel UniFETTM II MOSFET
600 V, 4.0 A, 2 Ω
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFETTM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD5N60NZ
600
±25
4.0
2.4
16
216
4.0
8.3
10
83
0.7
-55 to +150
300
FDD5N60NZ
1.5
90
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C1
1
www.fairchildsemi.com

--------------------------------------------
FDD5N60NZ pdf, 電子部品, 半導体, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 12.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
VGS = 10V
2.5
VGS = 20V
2.0
1.5 0
*Note: TC = 25oC
246
ID, Drain Current [A]
8
Figure 5. Capacitance Characteristics
1000
Ciss
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
10 Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
30.1
1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
20
*Notes:
10 1. VDS = 20V
2. 250μs Pulse Test
150oC
1 25oC
-55oC
0.1 2
468
VGS, Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
30
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0
VSD, Body Diode Forward Voltage [V]
1.2
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 4A
0
0 2 4 6 8 10
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. C1
3
www.fairchildsemi.com





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