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部品番号 6R385P
部品説明 IPI60R385CP
メーカ Infineon
ロゴ Infineon ロゴ 
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6R385P Datasheet, 6R385P PDF,ピン配置, 機能
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPI60R385CP
650 V
0.385
17 nC
PG-TO262
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPI60R385CP
Package
PG-TO262
Ordering Code Marking
SP000103250 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Rev. 2.1
page 1
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-02-15

--------------------------------------------
6R385P pdf, 電子部品, 半導体, ピン配列
Parameter
Dynamic characteristics
Symbol Conditions
IPI60R385CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 790 - pF
C oss
f =1 MHz
- 38 -
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 36 -
- 96 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 10 - ns
t r V DD=400 V,
-5-
V GS=10 V, I D=5.2 A,
t d(off)
R G=3.3
- 40 -
tf - 5 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
-
-
-
-
4 - nC
6-
17 22
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=5.2 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 260 - ns
- 3.1 - µC
- 24 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
page 3
2007-02-15





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