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電子部品 BCV61 Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 BCV61
部品説明 NPN general purpose double transistor
メーカ Philips
ロゴ Philips ロゴ 
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BCV61 Datasheet, BCV61 PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV61
NPN general purpose double
transistor
Product specification
Supersedes data of 1997 Jun 16
1999 Apr 08

--------------------------------------------
BCV61 pdf, 電子部品, 半導体, ピン配列
Philips Semiconductors
NPN general purpose double transistor
Product specification
BCV61
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Transistor TR1
ICBO
collector cut-off current
IEBO emitter cut-off current
hFE DC current gain
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
Cc collector capacitance
fT transition frequency
F noise figure
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 100 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA; note 1
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V; note 2
IC = 10 mA; VCE = 5 V; note 2
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS
hFE
base-emitter forward voltage
DC current gain
BCV61A
VCB = 0; IE = 250 mA
VCB = 0; IE = 10 µA
IC = 2 mA; VCE = 5 V
BCV61B
BCV61C
MIN. TYP. MAX. UNIT
− − 15 nA
− − 5 µA
− − 100 nA
100
110
800
90 250 mV
200 600 mV
700 mV
900 mV
580 660 700 mV
− − 770 mV
2.5 pF
100 − − MHz
− − 10 dB
−−
400
110
200
420
1.8 V
mV
220
450
800
1999 Apr 08
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