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データシート BT168 PDF ( 特性, スペック, ピン接続図 )

部品番号 BT168
部品説明 Thyristors
メーカ Philips
ロゴ Philips ロゴ 
プレビュー
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BT168 Datasheet, BT168 PDF,ピン配置, 機能
BT168 series
Thyristors logic level for RCD/GFI/LCCB applications
Rev. 04 — 20 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
s Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s For use in Residual Current Devices (RCD), Ground Fault Interrupters (GFI) and
Leakage Current Circuit Breakers (LCCB) applications, where a minimum IGT limit is
needed.
1.4 Quick reference data
s VDRM, VRRM 500 V (BT168E)
s VDRM, VRRM 600 V (BT168G)
s IT(RMS) 0.8 A
s IT(AV) 0.5 A
s ITSM 8 A.
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
anode (a)
gate (g)
cathode (k)
Simplified outline
Symbol
sym037
321
SOT54 (TO-92)

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BT168 pdf, ピン配列
Philips Semiconductors
BT168 series
Thyristors logic level for RCD/GFI/LCCB applications
0.8
Ptot
(W)
0.6
1.9
2.2
a=
1.57
001aab446 77
Tc(max)
(°C)
89
0.4
0.2
0
0
2.8
4
0.1 0.2 0.3
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
0.4 0.5
α
IT(AV) (A)
101
113
125
0.6
a = form factor = IT(RMS)/IT(AV).
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
10
ITSM
(A)
8
6
001aab499
IT ITSM
tp t
Tj initial = 25 °C max
4
2
0
1 10 102 103
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
9397 750 13511
Product data sheet
Rev. 04 — 20 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3 of 12


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BT168 電子部品, 半導体
Philips Semiconductors
BT168 series
Thyristors logic level for RCD/GFI/LCCB applications
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
IL latching current
IH holding current
VT on-state voltage
VGT gate trigger voltage
ID, IR
off-state leakage
current
Dynamic characteristics
dVD/dt
critical rate of rise of
off-state voltage
tgt gate controlled
turn-on time
tq circuit commuted
turn-off time
Conditions
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
VD = 12 V; IGT = 0.5 mA;
RGK = 1 k; see Figure 10
VD = 12 V; IGT = 0.5 mA;
RGK = 1 k; see Figure 11
IT = 1.2 A
IT = 10 mA; gate open circuit;
see Figure 7
VD = 12 V
VD = VDRM(max); Tj = 125 °C
VD = VDRM(max); VR = VRRM(max);
Tj = 125 °C; RGK = 1 k
VDM = 67 % VDRM(max); Tj = 125 °C;
exponential waveform;
see Figure 12
RGK = 1 k
gate open circuit
ITM = 2 A; VD = VDRM(max);
IG = 10 mA; dIG/dt = 0.1 A/µs
VD = 67 % VDRM(max); Tj = 125 °C;
ITM = 1.6 A; VR = 35 V;
dITM/dt = 30 A/µs; dVD/dt = 2 V/µs;
RGK = 1 k
Min Typ Max Unit
20 50 200 µA
- 2 6 mA
- 2 5 mA
-
1.25 1.7
V
- 0.5 0.8 V
0.2 0.3 -
V
-
0.05 0.1
mA
500 800 -
- 25 -
- 2-
- 100 -
V/µs
V/µs
µs
µs
9397 750 13511
Product data sheet
Rev. 04 — 20 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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