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データシート KTB688 PDF ( 特性, スペック, ピン接続図 )

部品番号 KTB688
部品説明 Silicon PNP Power Transistors
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 
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KTB688 Datasheet, KTB688 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type KTD718
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
isc Product Specification
KTB688
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-1 A
80 W
150
Tstg Storage Temperature Range -55~150
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark

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