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データシート KTB2510 PDF ( 特性, スペック, ピン接続図 )

部品番号 KTB2510
部品説明 Silicon PNP Power Transistors
メーカ Inchange Semiconductor
ロゴ Inchange Semiconductor ロゴ 
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KTB2510 Datasheet, KTB2510 PDF,ピン配置, 機能
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
KTB2510
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max) @IC= -7A
·High DC Current Gain
: hFE= 5000(Min) @ IC= -7A, VCE= -4V
·Complement to Type KTD1510
APPLICATIONS
·High power amplifier applications
·Recommended for 60W audio amplifier output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-10 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-1 A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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