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電子部品 DTA124EE Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 DTA124EE
部品説明 PNP Digital Transistor
メーカ WILLAS
ロゴ WILLAS ロゴ 
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DTA124EE Datasheet, DTA124EE PDF,ピン配置, 機能
WILLAS
FM120-M+
DTA124EE THRU
1.P0ANSPURDFAiCgEitMaOlUTNTraSCnHsOiTsTtKoYrBARRIER RECTIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
FeaturesHigh current capability, low forward voltage drop.
High surge capability.
Pb-FreGeuparadcriknag gfoer oisvearvvoaltialagebplerotection.
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
SOT-523
0.012(0.3) Typ.
RoHSUprltoradhuicgth-fosprepeadcskwinitcghcinogd. e suffix ”G”
Silicon epitaxial planar chip, metal silicon junction.
HalogeLneafrde-fereperpoadrutscmt efoert epnavcirkoinnmgecnotadl estasnudffaixrds“Hof
Epoxy mMIeLe-StsTDU-L1995400V/-2028flammability rating
MoisureRoSHeSnpsroitdivuictyt foLrepvaeckl i1ng code suffix "G"
Built-in Hbaialosgernesfriesetoprrsodeuncat fbolrepathckeincgocnofdigeusruafftiixo"nH"of an inverter circuit
withouMt ceocnnheactninigceaxltedrnaatlainput resistors
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
TishoelabtioianEsptrooexsayilsl:otUowLrs9n4ec-ogVna0striivasetteobdfifaltahsmiinneg-frieolmtfatrrhdeeasniisnt tpourst.
with complete
They also have
the
aOdnvlyant••htaeTCgeaoersmneo/ion:f aMfaflloscmlo:dPonelsaddttipetcildooansmtetsirpcmn,leeiSnteOeadllDyst-,eo1sl2oibm3ledHiensraeatbtinlfeogprpeoarpMreaIrsLai-ttSiicoTneD,f-fm7e5ca0tks,i.ng
device design easMyethod 2026
0.031(0.8) Typ.
.043(1.10)
0.040(1.0)
0.024(0.6)
.014(0.03.503)1(0.8) Typ.
.010(0.25)
Polarity : Indicated by cathode band
Dim.0en3s5io(0n.s9i0n)inches and (millimeters)
AbsolutemMoauxnitmingumPorsaititoinng: Asn@y 25к
Symbol Weight : ApprPoaxriammaetteedr 0.011 gram Min Typ Max Unit
VCC Supply voltage
--- -50 ---
V
VIN
IO
ICR(MaAtXi)ngs
aIOtn2up5tuptuvtoMcalutmaArgrbXeeineItMnt UteMmpRerAatTurIeNuGnlSesAs oNthDerEw--4-Lis-0Ee CspTe--1-Rc3-0i0-f0IieCdA. L1--0C- HARmVAACTERISTICS
SPidngle phaPsoewheraldfiswsaipvaet,io6n0Hz, resistive of inductive-l-o-ad. 150
  TFTsotjgr capacSJiuttiovnrecatiglooenadttee,mmdpeperearrataettuucrreuerrent by 20%
--- 150
-55 ---
---
---
150
mW
ć
ć
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
EleMMcaatrxkrimiincugmaCloRCdeehcuarrreantcPteearkisRetivcersse@Vo2lt5agкe
12 13
14
VRRM
20
30
40
SyMVmaI(oxbffi)omlum
MVaI(oxni)mum
RMS Voltage Parameter
DInCpButlovcoklitnaggeVo((VVltaCOCg==e--05.2VV, ,IOI=O=-1-50m0­A)A)
-M0V.i5nRMS
Typ
---
14
Max
---
21
Unit
V
28
--V- DC --- 20 -3.0 30 V 40
VMOa(xoni)mum AOvuetrpaugtevFooltrawga=erd(IRO/eIIct-i1fie0dmCAu/-r0re.5nmt A
  II =Input current (VI -5V)
--- IO ---
-- - ---
-0.3
-0.36
V
mA
PIOe(aofkf) ForwaOrduStpuurgtecuCrurrerennt t(V8.C3C=m=-s5s0iVng,lVe Iha0lf) sine-wave
suGpIerimposeDdConcurarrteedntlogaadin(J(EVDOE=C-5mV=,etIhOod-5) mA)
5--6I-FSM
---
---
-0.5 ­A
---
RTRy2/pR1ic1al TheRIrnmepsauiltsRrtaeenssciissettaarnanctcieoe (Note 2)
TOypfTpeircaatlinJgunTT(cVertimaOo=nnps-e1Cirt0iaaoVtpnu,arfIecrOiet=Raq5anumnceegAnec(,Nyf=o1te001M) Hz)
105.R8.4ΘJA
22
1.0
CJ
---TJ 250
28.6   K¡
1.2  
----55 to M+1H2z5
Storage Temperature Range
 
TSTG
15 16
50 60
18 10
80 100
35 42
50 60
.5060 8 ( 0 . 2 0 ) 70
.80004(0.10)100
1.0
 
30
.004(0.10)MAX.
40
120
 
 
  -55 to +150
- 65 to +17.5014(0.35)
.006(0.15)
115
150
105
150
120
200
140
200
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
Maximum Average Reverse Current at @*TMAa=2rk5℃ing: 15 IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.85
0.9 0.92
Dimensio0n.5s in inches and (millimeters)
 
10
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.

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