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部品番号 BUL44G
部品説明 NPN Bipolar Power Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 
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BUL44G Datasheet, BUL44G PDF,ピン配置, 機能
BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific stateoftheart die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Full Characterization at 125°C
Tight Parametric Distributions are Consistent LottoLot
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating
CollectorEmitter Sustaining Voltage
CollectorBase Breakdown Voltage
EmitterBase Voltage
Collector Current Continuous
Peak (Note 1)
Base Current
Continuous
Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
PD
Value
400
700
9.0
2.0
5.0
1.0
2.0
50
0.4
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg 65 to 150 _C
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
2.5 _C/W
Thermal Resistance, JunctiontoAmbient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 5 Seconds
TL
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
http://onsemi.com
POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
123
TO220AB
CASE 221A09
STYLE 1
MARKING DIAGRAM
BUL44G
AY WW
BUL44
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
BUL44G
TO220
(PbFree)
50 Units / Rail
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 Rev. 7
1
Publication Order Number:
BUL44/D

--------------------------------------------
BUL44G pdf, 電子部品, 半導体, ピン配列
BUL44G
SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 ms)
TurnOn Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V)
(TC = 125°C)
ton
TurnOff Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc, VCC = 300 V)
(TC = 125°C)
toff
TurnOn Time
(IC = 1.0 Adc, IB1 = 0.2 Adc
IB1 = 0.5 Adc, VCC = 300 V)
(TC = 125°C)
ton
TurnOff Time
(IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc, VCC = 300 V)
(TC = 125°C)
toff
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
(IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 0.2 Adc)
(TC = 125°C)
tfi
Storage Time
(TC = 125°C)
tsi
Crossover Time
(TC = 125°C)
tc
Fall Time
(IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc)
(TC = 125°C)
tfi
Storage Time
(TC = 125°C)
tsi
Crossover Time
(TC = 125°C)
tc
Fall Time
(IC = 0.8 Adc, IB1 = 160 mAdc
IB2 = 160 mAdc)
(TC = 125°C)
tfi
Storage Time
(TC = 125°C)
tsi
Crossover Time
(TC = 125°C)
tc
70
2.6
40 100
40
1.5 2.5
2.0
85 150
85
1.75 2.5
2.10
125 200
120
0.7 1.25
0.8
110 200
110
110 175
120
1.7 2.75
2.25
180 300
210
170
180
3.8
4.2
190 300
350
ns
ms
ns
ms
ns
ms
ns
ns
ms
ns
ns
ms
ns
http://onsemi.com
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