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データシート IRFZ40FI PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ40FI
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 
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Total 9 pages
		
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IRFZ40FI Datasheet, IRFZ40FI PDF,ピン配置, 機能
IRFZ40
IRFZ40FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRFZ40
IRFZ40FI
VDSS
50 V
50 V
R DS( on)
< 0.028
< 0.028
ID
50 A
27 A
s TYPICAL RDS(on) = 0.022
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
3
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (cont.) at Tc = 25 oC
ID Drain Current (cont.) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1993
Value
IRFZ40
IRFZ40FI
50 50
50 50
± 20
50 27
35 19
200 200
150 45
1 0.3
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/9

1 Page



IRFZ40FI pdf, ピン配列
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symb ol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 25 V ID = 29 A
RG = 4.7 VGS = 10 V
(see test circuit)
ID = 64 A VGS = 10 V
VDD = Max Rating x 0.8
(see test circuit)
SOURCE DRAIN DIODE
Symb ol
IS D
I SDM()
VSD ()
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Test Conditions
VGS = 0 ISD = 50 A
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 50 A
VDD = 30 V
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
IRFZ40/FI
Min.
Typ.
50
110
60
25
50
15
27
Max.
70
160
90
35
70
Unit
ns
ns
ns
ns
nC
nC
nC
Min.
Typ.
Max.
50
200
Unit
A
A
150
0. 45
2
V
ns
µC
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
3/9


3Pages


IRFZ40FI 電子部品, 半導体
IRFZ40/FI
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit
6/9

6 Page





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