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データシート IRFZ48N PDF ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48N
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 
プレビュー
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IRFZ48N Datasheet, IRFZ48N PDF,ピン配置, 機能
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1406A
IRFZ48N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.016
ID = 64A
S
TO-220AB
Max.
64
45
210
140
0.90
± 20
270
32
14
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97

1 Page



IRFZ48N pdf, ピン配列
IRFZ48N
1000
100
TOP
BOTTOM
VG S
1 5V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5V
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
0.1
0.1
4.5V 20µs PULSE W IDTH
TC = 2 5°C
A
1 10 100
VD S , Drain-to-Source Voltage (V )
Fig 1. Typical Output Characteristics
10
4.5 V
1
0.1
0.1
20µs P ULSE WIDTH
TC = 17 5°C
A
1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 2 5 ° C
1
V DS= 25V
20µs P ULSE W ID TH
0.1 A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
2.5
ID = 53A
2.0
1.5
1.0
0.5
0.0
V GS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRFZ48N 電子部品, 半導体
IRFZ48N
15 V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
700
ID
TOP 13A
600 22A
BOTTOM 32A
500
400
300
200
100
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

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